Wang Lei君(D2)のSiC結晶成長プロセスの数値計算に関する論文が受理
Wang Lei君(D2)のSic結晶成長プロセスの数値計算に関する論文がJournal of Crystal Growth誌に受理されました.
Lei Wang, Takashi Horiuchi, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost, Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method, J. Crystal Growth (accepted)